Polarization photo absorption spectroscopy of ZnO/CdS/Cu(In, Ga)Se2 thin film solar cells
DOI:
https://doi.org/10.15626/Eco-Tech.1999.010Nyckelord:
Cu(ln,Ga)Se2 ,thin film, solar cell, photosensitivity, induced photopleochroismAbstract
The photosensitivity of polycrystalline-film Cu(ln,Ga)Se2/CdS/ZnO solar cells with different thickness of CdS and ZnO films have been studied. These structures exhibit a conversion efficiency 11-12% in the spectral region from 1.2 to 2.4 eV at T= 300 K. Polarization photosensitivity was observed for oblique incidence of linearly polarized light on the ZnO surface of these structures. The induced photopleochroism and an increase of the photocurrents as a result of a decrease of reflection losses were found. The induced photopleochroism 82 coefficient P1 increases with the angle of incidence E> as P1- and its value is
found to be 10-17% at E>= 75e°. The results of these polarization investigations demonstrate the sensitivity of the photoelectric processes to the optical quality of the ZnO films. Such polycrystalline-film solar cells can be employed as polarization-photosensitive devices.
Statistik
Referenser
Baranskii P.l. Klochkov V.P. And Potikevich I.V. (1975). Semiconductor Electronics . Naukova Dumka. Kiev.
Botnaryuk V. M. Koval' A.V. Simashkevich A.V. Shcherban D.A. Rud' V.Yu. And Rud' Yu.V. ( 1997), Polarization photosensitivity of silicon solar cells with an antire-flection coating consisting of a mixture of indium and tin oxides. Semiconductors. 31 (7), 677.680. DOI: https://doi.org/10.1134/1.1187064
Kesamanly F. P. Rud' V.Yu. And Rud' Yu.V. (1 996). Natural photopleochroism in semiconductors -a review. Semiconductors 30( 11 ). I 00 1.10 I 0.
Medvedkin G. A. And Rud' Yu. V. ( 1981 ). The parameters of polarization photosensitivity of isotropic semiconductors. Phys. St. Sol.e. 67(a). 333.337. DOI: https://doi.org/10.1002/pssa.2210670133
Ruckh M. Schmid D. Kaiser M. Schaffler R. Walter T. And Schock H.W. (1e996). Influence of substrates on the electrical properties of Cu(ln.Ga)Se2 thin films. Solar Energy Materials and Solar Cells. 4 I /42.3 35.343. DOI: https://doi.org/10.1016/0927-0248(95)00105-0
Rud' V.Yu. (1998). Induced Photopleochroism GaAlAs/GaAs heterophotoelements. 3rd St.Petersburg Assembly of Young Scientists and Specialists. St. - Petersburg, Russia.
Rud' V.Yu. Rud' Yu.V. Walter T. And Schock H.W. ( 1998). Induced photopleochroism of ZnO/CdS/Cu(In.Ga)Se2 solar cells. Inst. Phys. Conf. Ser. No 152,97 1 .974.
Schmidt D. Ruckh M. And Schock H.W. (1996). A comprehensive characterization of the interfaces in Mo/CIS/CdS/ZnO solar cells structures. Solar Energy Materials and Solar Cells, 41 /42.28e1.294. DOI: https://doi.org/10.1016/0927-0248(95)00107-7
Stolt L. And Bodegard M. (1996). High efficiency thin solar cells based on chalcopyrite semiconductors. Cryst. Res. Technol., 31 (I).397.404.
Publicerad
Nummer
Sektion
